IRG - Controlling Electrons at Interfaces

IRG Senior Participants:
Hector Abruña (Chem, co-leader), Dan Ralph (Phys, co-leader), Piet Brouwer (Phys), Robert Buhrman (A&EP), Garnet Chan (C&CB), Edwin Kan (E&CE), David Muller (A&EP)
Collaborators: C. Beenakker (Leiden), B. Beri (Leiden), W. Egelhoff (NIST Gaithersburg), W. Harneit (Berlin), B. Moeckly (STI), J. Read (NIST Gaithersburg), C. Timm (Dresden), D. Stewart (Cornell Nanoscale Facility), D. Worledge (IBM)

Our group is working to achieve atomic-level understanding and control of the electronic properties of interfaces, so as to better manipulate electron and spin transport. By combining advanced microscopy techniques with state-of-the-art nanofabrication and chemical synthesis, we are conducting fundamental research into the coupling between metal electrodes and molecules in single-molecule devices. We are also investigating the charge states at insulating interfaces that are used for molecular electronics, magnetic tunnel junctions, and silicon devices.

E-mail IRG leaders: Hector Abruña and Dan Ralph